Effects of interaction strength, doping, and frustration on the antiferromagnetic phase of the two-dimensional Hubbard model

摘要

Recent quantum-gas microscopy of ultracold atoms and scanning tunnelingmicroscopy of the cuprates reveal new detailed information about doped Mottantiferromagnets, which can be compared with calculations. Using cellulardynamical mean-field theory, we map out the antiferromagnetic (AF) phase of thetwo-dimensional Hubbard model as a function of interaction strength $U$, holedoping $\delta$ and temperature $T$. The N\'eel phase boundary is non-monotonicas a function of $U$ and $\delta$. Frustration induced by second-neighborhopping reduces N\'eel order more effectively at small $U$. The doped AF isstabilized at large $U$ by kinetic energy and at small $U$ by potential energy.The transition between the AF insulator and the doped metallic AF iscontinuous. At large $U$, we find in-gap states similar to those observed inscanning tunneling microscopy. We predict that, contrary to the Hubbard bands,these states are only slightly spin polarized.